3-3.6-GHz Wideband GaN Doherty Power Amplifier Exploiting Output Compensation Stages

被引:134
作者
Rubio, Jorge Moreno [1 ]
Fang, Jie [1 ]
Camarchia, Vittorio [1 ,2 ]
Quaglia, Roberto [1 ]
Pirola, Marco [1 ]
Ghione, Giovanni [1 ]
机构
[1] Politecn Torino, Dept Elect & Telecommun, I-10129 Turin, Italy
[2] Ist Italiano Tecnol, Ctr Space Human Robot, I-10129 Turin, Italy
关键词
Broadband matching networks; Doherty power amplifiers (PAs); GaN-based field-effect transistors (FETs); wideband microwave amplifiers; WiMAX; MICROWAVE MEASUREMENTS;
D O I
10.1109/TMTT.2012.2201745
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We discuss the design, realization and experimental characterization of a GaN-based hybrid Doherty power amplifier for wideband operation in the 3-3.6-GHz frequency range. The design adopts a novel, simple approach based on wideband compensator networks. Second-harmonic tuning is exploited for the main amplifier at the upper limit of the frequency band, thus improving gain equalization over the amplifier bandwidth. The realized amplifier is based on a packaged GaN HEMT and shows, at 6 dB of output power back-off, a drain efficiency higher than 38% in the 3-3.6-GHz band, gain around 10 dB, and maximum power between 43 and 44 dBm, with saturated efficiency between 55% and 66%. With respect to the state of the art, we obtain, at a higher frequency, a wideband amplifier with similar performances in terms of bandwidth, output power, and efficiency, through a simpler approach. Moreover, the measured constant maximum output power of 20 W suggests that the power utilization factor of the 10-W (Class A) GaN HEMT is excellent over the amplifier band.
引用
收藏
页码:2543 / 2548
页数:6
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