Low-temperature tracking detectors

被引:3
作者
Niinikoski, TO [1 ]
Abreu, M
Anbinderis, P
Anbinderis, T
D'Ambrosio, N
de Boer, W
Borchi, E
Borer, K
Bruzzi, M
Buontempo, S
Chen, W
Cindro, V
Dezillie, B
Dierlamm, A
Eremin, V
Gaubas, E
Gorbatenko, V
Granata, V
Grigoriev, E
Grohmann, S
Hauler, F
Heijne, E
Heising, S
Hempel, O
Herzog, R
Härkönen, J
Ilyashenko, I
Janos, S
Jungermann, L
Kalesinskas, V
Kapturauskas, J
Laiho, R
Li, Z
Luukka, P
Mandic, I
De Masi, R
Menichelli, D
Mikuz, M
Militaru, O
Nuessle, G
O'Shea, V
Pagano, S
Paul, S
Solano, BP
Piotrzkowski, K
Pirollo, S
Pretzl, K
Rahman, M
Mendes, PR
Rouby, X
机构
[1] CERN, CH-1211 Geneva, Switzerland
[2] LIP, P-1000 Lisbon, Portugal
[3] Vilnius State Univ, Inst Mat Sci & Appl Res, LT-2040 Vilnius, Lithuania
[4] Univ Naples Federico II, Dipartimento Fis, I-80125 Naples, Italy
[5] Ist Nazl Fis Nucl, I-80125 Naples, Italy
[6] Univ Karlsruhe, IEKP, D-76128 Karlsruhe, Germany
[7] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy
[8] Univ Bern, Lab Hochenergiephys, CH-3012 Bern, Switzerland
[9] Brookhaven Natl Lab, Upton, NY 11973 USA
[10] Jozef Stefan Inst, Exp Particle Phys Dep, Ljubljana 1001, Slovenia
[11] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[12] Brunel Univ, Uxbridge UB8 3PH, Middx, England
[13] Univ Geneva, Dept Radiol, CH-1211 Geneva, Switzerland
[14] ILK Dresden, D-01309 Dresden, Germany
[15] Univ Helsinki, Helsinki Inst Phys, FIN-00014 Helsinki, Finland
[16] Turku Univ, Wihuri Phys Lab, FI-20014 Turku, Finland
[17] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany
[18] Univ Catholique Louvain, B-1348 Louvain, Belgium
[19] Univ Glasgow, Dept Phys & Astron, Glasgow G12 8QQ, Lanark, Scotland
关键词
p(+)-i-p(+) detectors; low temperature; silicon microstrip detectors; thermoelasticity; current-injected detectors; forward bias;
D O I
10.1016/j.nima.2003.11.228
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
RD39 collaboration develops new detector techniques for particle trackers, which have to withstand fluences up to 10(16) cm(-2) of high-energy particles. The work focuses on the optimization of silicon detectors and their readout electronics while keeping the temperature as a free parameter. Our results so far suggest that the best operating temperature is around 130 K. We shall also describe in this paper how the current-injected mode of operation reduces the polarization of the bulk silicon at low temperatures, and how the engineering and materials problems related with vacuum and low temperature can be solved. (C) 2003 Published by Elsevier B.V.
引用
收藏
页码:87 / 92
页数:6
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