Ferroelectric and piezoelectric properties of tungsten doped CaBi4Ti4O15 ceramics

被引：16

作者：

Zeng, Jiangtao ^{[1
]}

Wang, Ying ^{[1
]}

Li, Yongxiang ^{[1
]}

Yang, Qunbao ^{[1
]}

Yin, Qingrui ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

JOURNAL OF ELECTROCERAMICS | 2008年 / 21卷 / 1-4期

基金：

中国国家自然科学基金;

关键词：

Bismuth layer-structured ferroelectric; Tungsten dopant; Lead-free piezoelectric;

D O I：

10.1007/s10832-007-9144-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tungsten doped CaBi4Ti4O15 (CBT) ceramics was prepared by solid-state reaction method. A pure single phase of layer-structured ferroelectric with m=4 was formed when x <= 0.025. The effect of W doping on dielectric, ferroelectric and piezoelectric properties was investigated. W6+ doping increased the temperature stability of dielectric constant and decreased dielectric loss. W6+ doping decreased the remanent polarization, while the coercive field decreased as well, as a result, the piezoelectric constant was increased. AC conductivity measurement showed that W6+ doping increased the conductivity of CBT ceramics and showed n-type conducting mechanism. W6+ doped ceramics has smaller activation energy due to many defects introduced in the crystal lattice.

引用

页码：305 / 308

页数：4