Ferroelectric and piezoelectric properties of tungsten doped CaBi4Ti4O15 ceramics

被引：16
|
作者：
Zeng, Jiangtao [1 ]
Wang, Ying [1 ]
Li, Yongxiang [1 ]
Yang, Qunbao [1 ]
Yin, Qingrui [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
来源：
JOURNAL OF ELECTROCERAMICS | 2008年 / 21卷 / 1-4期
基金：
中国国家自然科学基金;
关键词：
Bismuth layer-structured ferroelectric; Tungsten dopant; Lead-free piezoelectric;
D O I：
10.1007/s10832-007-9144-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Tungsten doped CaBi4Ti4O15 (CBT) ceramics was prepared by solid-state reaction method. A pure single phase of layer-structured ferroelectric with m=4 was formed when x <= 0.025. The effect of W doping on dielectric, ferroelectric and piezoelectric properties was investigated. W6+ doping increased the temperature stability of dielectric constant and decreased dielectric loss. W6+ doping decreased the remanent polarization, while the coercive field decreased as well, as a result, the piezoelectric constant was increased. AC conductivity measurement showed that W6+ doping increased the conductivity of CBT ceramics and showed n-type conducting mechanism. W6+ doped ceramics has smaller activation energy due to many defects introduced in the crystal lattice.
引用
收藏
页码：305 / 308
页数：4
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