An Industry-Ready 200 mm p-GaN E-mode GaN-on-Si power Technology

被引：0

作者：

Posthuma, N. E. ^{[1
]}

You, S. ^{[1
]}

Stoffels, S. ^{[1
]}

Wellekens, D. ^{[1
]}

Liang, H. ^{[1
]}

Zhao, M. ^{[1
]}

De Jaeger, B. ^{[1
]}

Geens, K. ^{[1
]}

Ronchi, N. ^{[1
]}

Decoutere, S. ^{[1
]}

Moens, P. ^{[2
]}

Banerjee, A. ^{[2
]}

Ziad, H. ^{[2
]}

Tack, M. ^{[2
]}

机构：

[1] IMEC, Leuven, Belgium

[2] ON Semicond, Oudenaarde, Belgium

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

Power transistors; gallium-nitride; GaN-on-Si; HEMT; p-GaN gate; 650V; reliability; packaging; 200mm; DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhancement mode 650V rated p-GaN gate HEMTs are fabricated on 200 mm p+ Si substrates by using an industrial, Au-free process. The devices show true e-mode performance, with a high Vt of 2.8 V, low off-state leakage current and are dynamic Rns_os free over the complete VDS and temperature range. High temperature reverse bias (HTRB) testing is done on-wafer and after packaging. For the first time, 650 V e-mode power HEMTs realized on 200 mm Si substrates, show industry ready device performance and pass 1008 hour reliability testing, at Vos=0 V, Vos=650 V.

引用

页码：284 / 287

页数：4

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