Growth mechanism and photoluminescence of the SnO2 nanotwists on thin film and the SnO2 short nanowires on nanorods

被引:21
作者
Bing, Wang [1 ]
Ping, Xu [1 ]
机构
[1] Shenzhen Univ, Sch Elect Sci & Technol, Shenzhen Key Lab Micronano Photon Informat Techno, Shenzhen 518060, Peoples R China
基金
中国国家自然科学基金;
关键词
nanostructures; crystal growth; photoluminescence; SEMICONDUCTOR NANOWIRES; NITRIDE NANORODS; CARBON NANOTUBE; RAMAN; NANOPARTICLES; EVAPORATION; POWDERS; NANOSTRUCTURES; SENSITIVITY; NANOCABLES;
D O I
10.1088/1674-1056/18/1/053
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
SnO2 nanotwists on thin film and SnO2 short nanowires on nanorods have been grown on single silicon substrates by using Au-Ag alloying catalyst assisted carbothermal evaporation of SnO2 and active carbon powders. The morphology and the structure of the prepared nanostructures are determined on the basis of field-emission scanning electron microscopy(FESEM), transmission electron microscopy(TEM), selected area electronic diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), x-ray diffraction (XRD), Raman and photoluminescence (PL) spectra analysis. The new peaks at 356, 450, and 489 nm in the measured PL spectra of two kinds of SnO2 nanostructures are observed, implying that more luminescence centres exist in these SnO2 nanostructures due to nanocrystals and defects. The growth mechanism of these nanostructures belongs to the vapour-liquid-solid (VLS) mechanism.
引用
收藏
页码:324 / 332
页数:9
相关论文
共 42 条
[1]   Structural characterization of nanocrystalline SnO2 by X-ray and Raman spectroscopy [J].
Abello, L ;
Bochu, B ;
Gaskov, A ;
Koudryavtseva, S ;
Lucazeau, G ;
Roumyantseva, M .
JOURNAL OF SOLID STATE CHEMISTRY, 1998, 135 (01) :78-85
[2]   Grain size effects on H-2 gas sensitivity of thick film resistor using SnO2 nanoparticles [J].
Ansari, SG ;
Boroojerdian, P ;
Sainkar, SR ;
Karekar, RN ;
Aiyer, RC ;
Kulkarni, SK .
THIN SOLID FILMS, 1997, 295 (1-2) :271-276
[3]   Research on electromagnetic wave absorbing properties of nano tetraleg ZnO [J].
Cao Jia-Wei ;
Huang Yun-Hua ;
Zhang Yue ;
Liao Qing-Liang ;
Deng Zhan-Qiang .
ACTA PHYSICA SINICA, 2008, 57 (06) :3641-3645
[4]   Bulk-quantity synthesis and self-catalytic VLS growth of SnO2 nanowires by lower-temperature evaporation [J].
Chen, YQ ;
Cui, XF ;
Zhang, K ;
Pan, DY ;
Zhang, SY ;
Wang, B ;
Hou, JG .
CHEMICAL PHYSICS LETTERS, 2003, 369 (1-2) :16-20
[5]   SYNTHESIS AND CHARACTERIZATION OF CARBIDE NANORODS [J].
DAI, HJ ;
WONG, EW ;
LU, YZ ;
FAN, SS ;
LIEBER, CM .
NATURE, 1995, 375 (6534) :769-772
[6]   Laser-assisted catalytic growth of single crystal GaN nanowires [J].
Duan, XF ;
Lieber, CM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (01) :188-189
[7]  
Duan XF, 2000, ADV MATER, V12, P298, DOI 10.1002/(SICI)1521-4095(200002)12:4<298::AID-ADMA298>3.0.CO
[8]  
2-Y
[9]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[10]   HIGH-RATE, GAS-PHASE GROWTH OF MOS2 NESTED INORGANIC FULLERENES AND NANOTUBES [J].
FELDMAN, Y ;
WASSERMAN, E ;
SROLOVITZ, DJ ;
TENNE, R .
SCIENCE, 1995, 267 (5195) :222-225