Low-Frequency Noise in Triple-Gate n-Channel Bulk FinFETs

被引：0
|
作者：
Simoen, E. [1 ]
Aoulaiche, M. [1 ]
Collaert, N. [1 ]
Claeys, C. [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF) | 2011年
关键词：
bulk MuGFETs; 1/f noise; GR noise;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The noise in n-channel bulk MuGFETs with 2.5 nm SiON gate dielectric is reported. It is shown that besides number fluctuations-related 1/f noise often Generation-Recombination (GR) noise is observed. From a detailed study of the fin length and width dependence it is concluded that the GR noise preferentially occurs for short and wide transistors. The latter observation points to traps in the gate oxide edges as a possible source of the excess noise.
引用
收藏
页码：127 / 130
页数：4
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