Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system

被引：6
|
作者：
Eberhard, F
Schauler, M
Deichsel, E
Kirchner, C
Unger, P
机构：
[1] Department of Optoelectronics, University of Ulm
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 46卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(99)00095-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The characteristics of Cl-2-Ar chemically-assisted ion-beam etching processes for GaN and GaAs are reported. The etch rate and anisotropy have been investigated varying ion energy, tilt angle, substrate temperature, and Cl-2 flow. Vertical and smooth sidewalls, which fulfill the requirements on laser facets, have been demonstrated in GaAs and GaN.
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页码：323 / 326
页数：4
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