Photoemission and inverse-photoemission studies of Bi2Y3 (Y=S, Se, Te) semiconductors

被引：22

作者：

Ueda, Y

Furuta, A

Okuda, H

Nakatake, M

Sato, H

Namatame, H

Taniguchi, M

机构：

[1] Kure Natl Coll Technol, Dept Elect Engn, Kure 7378506, Japan

[2] Hiroshima Univ, Fac Sci, Higashihiroshima 7398526, Japan

[3] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7398526, Japan

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1999年 / 101卷

关键词：

photoemission; electronic structure; V-2(VI)(3) semiconductor; Bi2Te3; thermoelectrics;

D O I：

10.1016/S0368-2048(98)00335-1

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

Valence-band and conduction-band densities of states (DOSs) of Bi2Y3 (Y=S, Se, Te) semiconductors have been investigated by means of ultraviolet photoemission (UPS) and inverse-photoemission spectroscopy (IPES). With the aid of calculated partial density of states for Bi2Te3 and the UPS and IPES spectra for Bi2Te2Se crystals grown by substituting Te(2) atoms in Bi2Te3 with Se atoms, we assign the partial DOSs for Bi2Te3 and Bi2Se3. Furthermore, it is found that Bi2S3 has the largest band gap (1.1 eV) among these three Bi2Y3 compounds. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：677 / 680

页数：4

共 9 条

[1] X-RAY PHOTOELECTRON-SPECTRA AND ELECTRONIC-STRUCTURE OF BI2X3 (X=O,S,SE,TE) [J].