Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications

被引：4

作者：

Ikeno, N. ^{[1
,2
,4
]}

Tachibana, T. ^{[1
,4
]}

Lee, H. ^{[1
,4
]}

Yoshida, H. ^{[3
,4
]}

Arafune, K. ^{[3
,4
]}

Satoh, S. ^{[3
,4
]}

Chikyow, T. ^{[2
]}

Ogura, A. ^{[1
,4
]}

机构：

[1] Meiji Univ, Tama Ku, 1-1-1 Higashimita, Kawasaki, Kanagawa 2148571, Japan

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Univ Hyogo, Himeji, Hyogo 6712280, Japan

[4] JST, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

基金：

日本科学技术振兴机构;

关键词：

Combinatorial synthesis; Surface passivation; Fixed charge; Photovoltaic; FILMS;

D O I：

10.4028/www.scientific.net/MSF.725.161

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the new materials applicable for the field effect passivation layer in crystalline Si solar cells, ZrO2-Al2O3 and ZrO2-Y2O3 binary systems, by using combinatorial synthesis method. As-deposited samples indicated hysteresis curves and flat band-voltage (V-FB) shifts at capacitance-voltage (C-V) measurements. After oxygen gas annealing (OGA) at 700 degrees C for 5min, an improvement of the hysteresis and a positive shift of V-FB were observed. OGA process influenced defects density related to decreasing oxygen vacancy. OGA processed ZrO2 incorporated with 20% Al2O3 and 15% Y2O3 structures showed the maximized negative fixed charge of-5.8 X 10(12) cm(-2) and -7.8 X 10(12) cm(-2) in each system, respectively, suggesting that the ZrO2 based alloy systems were revealed to be the promising material for the passivation in the solar cell application.

引用

页码：161 / +

页数：2

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