Combinatorial Synthesis Study of Passivation Layers for Solar Cell Applications

被引：4
作者：
Ikeno, N. [1 ,2 ,4 ]
Tachibana, T. [1 ,4 ]
Lee, H. [1 ,4 ]
Yoshida, H. [3 ,4 ]
Arafune, K. [3 ,4 ]
Satoh, S. [3 ,4 ]
Chikyow, T. [2 ]
Ogura, A. [1 ,4 ]
机构：
[1] Meiji Univ, Tama Ku, 1-1-1 Higashimita, Kawasaki, Kanagawa 2148571, Japan
[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan
[3] Univ Hyogo, Himeji, Hyogo 6712280, Japan
[4] JST, CREST, Kawaguchi, Saitama 3320012, Japan
来源：
DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷
基金：
日本科学技术振兴机构;
关键词：
Combinatorial synthesis; Surface passivation; Fixed charge; Photovoltaic; FILMS;
D O I：
10.4028/www.scientific.net/MSF.725.161
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the new materials applicable for the field effect passivation layer in crystalline Si solar cells, ZrO2-Al2O3 and ZrO2-Y2O3 binary systems, by using combinatorial synthesis method. As-deposited samples indicated hysteresis curves and flat band-voltage (V-FB) shifts at capacitance-voltage (C-V) measurements. After oxygen gas annealing (OGA) at 700 degrees C for 5min, an improvement of the hysteresis and a positive shift of V-FB were observed. OGA process influenced defects density related to decreasing oxygen vacancy. OGA processed ZrO2 incorporated with 20% Al2O3 and 15% Y2O3 structures showed the maximized negative fixed charge of-5.8 X 10(12) cm(-2) and -7.8 X 10(12) cm(-2) in each system, respectively, suggesting that the ZrO2 based alloy systems were revealed to be the promising material for the passivation in the solar cell application.
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页码：161 / +
页数：2
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