Migration barriers of neutral As di-interstitials in GaAs

被引:2
|
作者
Zollo, Giuseppe [1 ]
Gala, Fabrizio [1 ]
机构
[1] Univ Roma La Sapienza, Dipartimento Sci Base & Applicate Ingn, I-00161 Rome, Italy
来源
NEW JOURNAL OF PHYSICS | 2012年 / 14卷
关键词
LASER ANNEALED GAAS; ELECTRON-MICROSCOPY; GALLIUM-ARSENIDE; SELF-DIFFUSION; GROWN GAAS; DEFECTS; SILICON; PSEUDOPOTENTIALS; STATE; INP;
D O I
10.1088/1367-2630/14/5/053036
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The recent discovery of intrinsic di-interstitial stability against the isolated self-interstitial point defects in GaAs has evidenced the importance of such complexes in, for instance, irradiated GaAs. In this paper, we illustrate and discuss diffusion of such complexes in comparison with isolated self-interstitials. In particular, the diffusion barriers of neutral di-interstitials have been calculated in the framework of density functional theory, showing that, in addition to their being stable, di-interstitials can also diffuse rapidly through the lattice, similarly to isolated self-interstitials.
引用
收藏
页数:12
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