Synthesis and characterization of calcium phosphate coatings by metalorganic chemical vapor deposition

被引:0
|
作者
Gao, Y [1 ]
机构
[1] Battelle Mem Inst, Pacific NW Labs, Richland, WA 99352 USA
关键词
D O I
暂无
中图分类号
Q81 [生物工程学(生物技术)]; Q93 [微生物学];
学科分类号
071005 ; 0836 ; 090102 ; 100705 ;
摘要
Thin coatings of various calcium phosphates including tricalcium phosphate (TCP), calcium pyrophosphate, and hydroxyapatite were synthesized by plasma-enhanced metalorganic chemical vapor deposition (MOCVD). Structure, composition, and surface morphology of the coatings were characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and atomic force microscopy. All coatings were very dense and free of cracks. Xray diffraction showed that the as-grown coatings with the Ca/P ratio of 1.5+/-0.5 and 1.0+/-0.5 were crystalline alpha- TCP and pyrophosphate, respectively. However, hydroxyapatite coatings with the Ca/P ratio of similar to 1.67 were amorphous. The crystalline cl-TCP and pyrophosphate coatings exhibited strong growth texture. The textured orientations varied with different growth temperatures. In addition, the microstructure of the a-TCP coatings strongly depended on the growth temperatures.
引用
收藏
页码:361 / 366
页数:6
相关论文
共 50 条
  • [21] Characterization of Mg-doped GaN grown by metalorganic chemical vapor deposition
    Lachab, M
    Youn, DH
    Fareed, RSQ
    Wang, T
    Sakai, S
    SOLID-STATE ELECTRONICS, 2000, 44 (09) : 1669 - 1677
  • [22] Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN
    Horn, J
    Pavlidis, D
    Park, Y
    Hartnagel, HL
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3): : 414 - 418
  • [23] Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots
    Wang, J
    Nozaki, M
    Lachab, M
    Ishikawa, Y
    Fareed, RSQ
    Wang, T
    Hao, M
    Sakai, S
    APPLIED PHYSICS LETTERS, 1999, 75 (07) : 950 - 952
  • [24] IN-SITU CHARACTERIZATION OF A PLASMA METALORGANIC CHEMICAL-VAPOR-DEPOSITION PROCESS
    RICHTER, F
    PETER, S
    PINTASKE, R
    HECHT, G
    SURFACE & COATINGS TECHNOLOGY, 1994, 68 : 719 - 723
  • [25] RECENT DEVELOPMENTS IN METALORGANIC PRECURSORS FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    JONES, AC
    RUSHWORTH, SA
    AULD, J
    JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) : 503 - 510
  • [26] A novel Cu(II) chemical vapor deposition precursor: Synthesis, characterization, and chemical vapor deposition
    Anjana Devi
    J. Goswami
    R. Lakshmi
    S. A. Shivashankar
    S. Chandrasekaran
    Journal of Materials Research, 1998, 13 : 687 - 692
  • [27] A novel Cu(II) chemical vapor deposition precursor: Synthesis, characterization, and chemical vapor deposition
    Devi, A
    Goswami, J
    Lakshmi, R
    Shivashankar, SA
    Chandrasekaran, S
    JOURNAL OF MATERIALS RESEARCH, 1998, 13 (03) : 687 - 692
  • [28] Novel Cu(II) chemical vapor deposition precursor: synthesis, characterization, and chemical vapor deposition
    Indian Inst of Science, Bangalore, India
    J Mater Res, 3 (687-692):
  • [29] Rapid thermal metalorganic chemical vapor deposition of CdTe
    Amir, N
    Stolyarova, S
    Nemirovsky, Y
    JOURNAL OF CRYSTAL GROWTH, 1997, 179 (1-2) : 93 - 96
  • [30] REFLECTING ON METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)
    MANASEVIT, HM
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 323 : 94 - 99