Role of W-Rich CuWO4and Doped Zn-CuWO4Ceramics and Its Improved Photoelectrochemical Cell Performances Synthesized by Solid State Reaction Method

被引:6
作者
Balasubramanian, Venkatachalapathy [1 ]
Kannan, Selvaraj [2 ]
Thangaraj, Nishanthi S. [3 ]
Sivakumar, Ganesan [4 ]
Mohanraj, Kannusamy [1 ]
机构
[1] Manonmaniam Sundaranar Univ, Dept Phys, Tirunelveli 627012, Tamil Nadu, India
[2] Excel Engn Coll, Dept Phys, Namakkal 637303, Tamil Nadu, India
[3] Cent Electrochem Res Inst CECRI, Cent Electrochem Power Sources Div, Karaikkudi 630003, Tamil Nadu, India
[4] Annamalai Univ, CISL, Dept Phys, Chidambaram 608002, Tamil Nadu, India
来源
CHEMISTRYSELECT | 2020年 / 5卷 / 29期
关键词
Charge transfer; CuWO4; Energy; Impedance; Inorganic chemistry; Photocurrent; TUNGSTATE THIN-FILMS; ASSISTED PREPARATION; FACILE PREPARATION; CUWO4; NANOCOMPOSITES; DEGRADATION; PHOTOANODES; ELECTRODES; OXIDATION; JUNCTION;
D O I
10.1002/slct.202000229
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Triclinic CuWO(4)and Zn doped CuWO(4)nanocomposites have been synthesized by the solid state reaction method to evaluate the Photoelectrochemical (PEC) performance of the photoelectrodes. The existence of WO(3)along with CuWO(4)is affirmed by the XRD, XPS spectra and HRTEM images. PEC measurements showed that the generated photocurrent is found to be maximum of about 8.94 mA/cm(2)for Zn doped CuWO(4)whereas it is 2.63 mA/cm(2)for bare CuWO(4)electrode measured at 0.1 M of Na(2)SO(4)acts as a suitable electrolyte under the illumination. The carrier density (N-d) of the nanocomposites is determined by Mott-Schottky plot that has n-type conductivity for both the samples. The negative flat band potential of -0.52 V for Zn doped CuWO(4)might be attributed to decrease in depletion width. Zn doped CuWO(4)shows higher power conversion efficiency of about 3.95%. The solution resistance and charge transfer resistance of both the photoelectrodes were calculated using Nyquist plot and it is lower for Zn-CuWO(4)which indicates better conductivity and electron transfer rate.
引用
收藏
页码:8959 / 8968
页数:10
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