Grain-boundary diffusion of germanium in copper and Cu-Ge and Cu-Fe alloys

被引:1
作者
Terent'ev, Yu A. [1 ]
Bokstein, B. S. [1 ]
Pomadchik, A. L. [1 ]
Popova, D. E. [1 ]
Rodin, A. O. [1 ]
机构
[1] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
关键词
Grain-boundary diffusion; grain boundaries; copper; germanium; iron; electron-probe microanalysis (EPMA); concentration dependence; ATOMIC COMPLEXES; SEGREGATION;
D O I
10.3103/S1067821212050124
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
The grain-boundary diffusion (GBD) of germanium in copper and its alloys Cu-2% Ge and Cu-0.5% Fe is investigated in the temperature range of 500-590A degrees C by means of electron-probe microanalysis. The GBD parameters (triple product P = s delta D (GB) and effective activation energy E) are found. The temperature dependence of the triple product for germanium GBD in pure copper can be described by equation P = 3 x 10(15)exp[-80 kJ mol(-1)/(RT)] m(3) s(-1). It is shown that the addition of Ge has almost no effect on the GBD parameters in copper, while doping with iron leads to a considerable reduction in the triple product.
引用
收藏
页码:380 / 385
页数:6
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