A 280-GHz Self-Mixing Balanced Frequency Tripler in SiGe BiCMOS Technology

被引：9
|
作者：
Turhaner, Arsen [1 ]
Dong, Yunfeng [1 ]
Zhurbenko, Vitaliy [1 ]
Johansen, Tom Keinicke [1 ]
机构：
[1] Tech Univ Denmark, Dept Elect Engn, DK-2800 Lyngby, Denmark
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2020年 / 30卷 / 10期
基金：
欧盟地平线“2020”;
关键词：
Power generation; Harmonic analysis; Power measurement; Power system harmonics; Transistors; Silicon germanium; Frequency measurement; Frequency tripler; mm-wave circuits; SiGe BiCMOS; subharmonic mixer; POWER; DOUBLER; OUTPUT;
D O I：
10.1109/LMWC.2020.3019589
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, a self-mixing balanced frequency tripler is presented. It comprises a push-push frequency doubling stage followed by a single balanced mixing stage sharing the input power via coupled lines. The chip is fabricated using the SG13G2 (130-nm SiGe BiCMOS) technology of Innovations for High Performance Microelectronics (IHP). A measured output power of 3 dBm is achieved at 280 GHz with a dc-to-RF efficiency of 2.19%.
引用
收藏
页码：965 / 968
页数：4
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