High resolution HSQ nanopillar arrays with low energy electron beam lithography

被引：29

作者：

Guerfi, Y. ^{[1
]}

Carcenac, F. ^{[1
]}

Larrieu, G. ^{[1
]}

机构：

[1] Univ Toulouse, CNRS, LAAS, F-31400 Toulouse, France

来源：

MICROELECTRONIC ENGINEERING | 2013年 / 110卷

关键词：

Electron beam lithography; Low energy; Nanopillars; 1D nanostructure array; HSQ; Inorganic resist; Nanofabrication; FIELD-EFFECT TRANSISTORS; HYDROGEN SILSESQUIOXANE; LINEWIDTH FLUCTUATIONS; RESIST; NETWORKS;

D O I：

10.1016/j.mee.2013.03.055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron beam lithography (EBL) is commonly used for the fabrication of nanostructures by top-down approach with precise control of size, shape, aspect ratio, and location. In this article, we demonstrate the realization of high aspect ratio nanopillars (7.5) with 20 nm diameter in 150 nm Hydrogen SilsesQuioxane (HSQ) thickness based on 20 keV energy exposure. A detailed study of design strategies has been conducted in order to correlate the design of the nanopillars and their practical realization. We describe an original way of scanning for HSQ nanopillar arrays fabrication with almost perfect anisotropic sidewalls (98.5%) and good circularity shape (1.62 nm-1 sigma) without any residual resist remaining around the nanostructures. (C) 2013 Elsevier B.V. All rights reserved.

引用

收藏

页码：173 / 176

页数：4

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