Surface characterisation of laser irradiated SiC ceramics by AES and XPS

被引：17
作者：
Baunack, S
Oswald, S
Tönshoff, HK
von Alvensleben, F
Temme, T
机构：
[1] Inst Festkorper & Werkstofforsch Dresden, D-01171 Dresden, Germany
[2] Laser Zentrum Hannover eV, D-30419 Hannover, Germany
来源：
FRESENIUS JOURNAL OF ANALYTICAL CHEMISTRY | 1999年 / 365卷 / 1-3期
关键词：
D O I：
10.1007/s002160051467
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Samples of sintered silicon carbide (SSiC) were irradiated with a KrF excimer laser (lambda = 248 nm) at energy densities of 10, 15 and 25 J/cm(2) in He atmosphere. The composition of the near surface region was investigated by Auger electron spectroscopy (AES) and photoelectron spectroscopy (XPS) after lapping, laser irradiation and tribological treatment, respectively. By laser irradiation a surface layer is formed which contains about 30% oxygen. The existence of different bonding states of Si, C and O was established by factor analysis of the AES depth profiles and by XPS. By laser irradiation SIC is decomposed and a siliconoxycarbide with the average composition SiC3.5O1.5 is formed. Beneath the oxidised surface layer the nominal elemental composition SiC is found but the sample represents a mixture of Si, graphite and siliconoxycarbide with a small amount of SiC only. Obviously, the decomposition zone exceeds in a depth > 300 nm.
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页码：173 / 177
页数：5
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