Surface photovoltage analysis of ZnO nanorods/p-Si heterostructure

被引：4

作者：

Kang, Dawei ^{[1
]}

Bian, Jiming ^{[1
]}

Sang, Yongchang ^{[1
]}

Liu, Aimin ^{[1
]}

Sun, Jingchang ^{[2
]}

Xuan, Jun ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China

[2] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2013年 / 16卷 / 02期

关键词：

ZnO nanorod; Si; Surface photovoltage; Kelvin probe; PROBE FORCE MICROSCOPY; SOLAR-CELLS; SYSTEM;

D O I：

10.1016/j.mssp.2012.10.016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, n-type ZnO nanorods (NRs) were fabricated on a p-type Si substrate to form a ZnO NRs/Si structure using a low-temperature wet chemical bath deposition method. Kelvin-probe-based surface photovoltage (KP-based SPV) technology was used to study the behavior of surface photogenerated charges for the as-grown heterostructure. In general, the KP-based SW response range of the ZnO NRs/Si structure was significantly expanded compared with the bare Si substrate, due to the incorporation of ZnO NRs. Moreover, the SPV response amplitude for ZnO NRs/Si structure also depended on the length and diameter of the NRs, and the corresponding mechanism was elucidated in terms of O-2 adsorption. The photovoltaic application of the ZnO NRs/Si based structure would benefit significantly from these achievements. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：520 / 524

页数：5

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