Influence of diffusion on space-charge-limited current measurements in organic semiconductors

被引：39

作者：

Kirchartz, Thomas ^{[1
,2
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England

[2] Univ London Imperial Coll Sci Technol & Med, Ctr Plast Elect, London SW7 2AZ, England

来源：

BEILSTEIN JOURNAL OF NANOTECHNOLOGY | 2013年 / 4卷

关键词：

current-voltage curves; electron-only device; drift-diffusion; mobility; simulation; traps; ELECTRON-TRANSPORT; HOLE TRANSPORT; RECOMBINATION; PHOTOCURRENT; PERFORMANCE; VINYLENE); DENSITY; VOLTAGE;

D O I：

10.3762/bjnano.4.18

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Numerical simulations of current-voltage curves in electron-only devices are used to discuss the influence of charged defects on the information derived from fitting space-charge-limited current models to the data. Charged, acceptor-like defects lead to barriers impeding the flow of electrons in electron-only devices and therefore lead to a reduced current that is similar to the situation where the device has a built-in voltage. This reduced current will lead to an underestimation of the mobilities and an overestimation of characteristic tail slopes if analytical equations are used to analyze the data. Correcting for the barrier created by the charged defects can, however, be a successful way to still be able to obtain reasonably accurate mobility values.

引用

页码：180 / 188

页数：9

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