Red Single-Photon Emission from InAs/AlGaAs Quantum Dots

被引：0

作者：

Rakhlin, M. V. ^{[1
]}

Belyaev, K. G. ^{[1
]}

Klimko, G. V. ^{[1
]}

Mukhin, I. S. ^{[2
,3
]}

Ivanov, S. V. ^{[1
]}

Toropov, A. A. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] St Petersburg Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[3] ITMO Univ, St Petersburg 197101, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 04期

基金：

俄罗斯科学基金会;

关键词：

D O I：

10.1134/S1063782618040243

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on single-photon emission of InAs/AlGaAs self-assembled quantum dots (QDs) grown by molecular beam epitaxy. By varying the growth conditions the QDs luminescence could be tuned over a wide wavelength range from 0.64 to 1 mu m, including red part of the visible spectrum. Emission properties of individual QDs are investigated by micro-photoluminescence (mu-PL) spectroscopy using 500-nm-size etched mesa structures. Autocorrelation functions of photons from single QDs, measured in the wide spectral range demonstrate antibunching effect at zero delay time with a value of g ((2))(0) similar to 0.17 that is a clear evidence of non-classical light.

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页码：511 / 513

页数：3

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