Magnetic Oscillations Driven by the Spin Hall Effect in 3-Terminal Magnetic Tunnel Junction Devices

被引：314

作者：

Liu, Luqiao ^{[1
]}

Pai, Chi-Feng ^{[1
]}

Ralph, D. C. ^{[1
,2
]}

Buhrman, R. A. ^{[1
]}

机构：

[1] Cornell Univ, Ithaca, NY 14853 USA

[2] Kavli Inst Cornell, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 18期

关键词：

ATOMIC LAYERS; TORQUE; SEMICONDUCTORS; EMISSION;

D O I：

10.1103/PhysRevLett.109.186602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that a direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic tunnel junction (MTJ) contacting the nanomagnet. The oscillation frequency can be controlled using the MTJ bias to tune the magnetic anisotropy. In this 3-terminal device, the SHE torque and the MTJ bias therefore provide independent controls of the oscillation amplitude and frequency, enabling new approaches for developing tunable spin torque nano-oscillators.

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页数：5

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