Defect-induced weak ferromagnetism in transition metal-doped ZnO nanoparticles

被引:13
|
作者
Mandal, Debabrata [1 ]
Sharma, Lalit Kumar [2 ]
Mukherjee, Samrat [2 ]
机构
[1] Indian Inst Technol, Dept Phys, Kharagpur, W Bengal, India
[2] Natl Inst Technol, Dept Phys, Patna 800005, Bihar, India
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 12期
关键词
ROOM-TEMPERATURE FERROMAGNETISM; DILUTED MAGNETIC SEMICONDUCTOR; THIN-FILMS; MN; FABRICATION; EXCHANGE; BEHAVIOR; BULK; CU;
D O I
10.1007/s00339-016-0573-y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, citric acid-capped and ethylene glycol-stabilized pristine and transition metal (TM = Co, Fe, Mn and Ni)-doped ZnO nanoparticles with the generic formula Zn1-xTMxO, x = 0.01 and 0.02, have been synthesized by sol-gel method. XRD confirmed the phase purity of all the samples. Average crystallite size calculated from Scherrer formula was within the range of 43 +/- 25 nm for different doped samples. The Raman spectra of (Co, Mn and Ni)-doped ZnO show strong E-2 (high) and E-1 (LO) modes. The synthesized samples also show strong luminescent emission from inherent Zn and O point defects (interstitial and vacancies) along with a sharp excitonic peak centred at 362 nm. Magnetic studies at 300 K reveal that all samples show weak room-temperature ferromagnetism at low magnetic fields with unsaturated M-H plot up to a measuring field of 5 T.
引用
收藏
页数:10
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