Origin of kink effect in AlGaN/GaN high electron mobility transistors: Yellow luminescence and Fe doping

被引：15

作者：

Killat, N. ^{[1
]}

Uren, M. J. ^{[1
]}

Wallis, D. J. ^{[2
]}

Martin, T. ^{[3
]}

Kuball, M. ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, CDTR, Bristol BS8 1TL, Avon, England

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[3] IQE PLC, Cardiff CF3 0LW, S Glam, Wales

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 15期

关键词：

VAPOR-PHASE EPITAXY; GAN; MECHANISM; HFETS;

D O I：

10.1063/1.4757993

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlGaN/GaN high electron mobility transistors with different Fe-doping density were studied using electrical and optical analysis to gain insight into the nature of traps responsible for the kink effect in electrical characteristics. Kink effect has been previously suggested to result from direct trapping of carriers in defects related to yellow luminescence (YL) centers. However, the results demonstrate that YL is suppressed by Fe doping, whereas the kink effect is not affected to the same extent. YL related defect states are therefore not exclusively responsible for the kink effect, suggesting a more complex trapping mechanism to affect device output characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757993]

引用

页数：3

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