Contact effects in organic thin-film transistor sensors

被引：41

作者：

Torsi, Luisa ^{[1
]}

Marinelli, Francesco ^{[1
]}

Angione, M. Daniela ^{[1
]}

Dell'Aquila, Antonio ^{[1
]}

Cioffi, Nicola ^{[1
]}

De Giglio, Elvira ^{[1
]}

Sabbatini, Luigia ^{[1
]}

机构：

[1] Univ Bari, Dipartimento Chim, I-70126 Bari, Italy

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 02期

关键词：

Thin films; Transistors; Chemo-bio sensors; Conducting polymers; Molecular electronics; FIELD-EFFECT TRANSISTORS; RESISTANCE; MOBILITY;

D O I：

10.1016/j.orgel.2008.11.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Contact effects in organic thin-film transistors (OTFTs) sensors are here investigated specifically respect to the gate field-induced sensitivity enhancement of more than three orders of magnitude seen in a DH alpha 6T OTFT sensor exposed to 1-butanol vapors. This study shows that such a sensitivity enhancement effect is largely ascribable to changes occurring to the transistor channel resistance. Effects, such as the changes in contact resistance, are seen to influence the low gate voltage regime where the sensitivity is much lower. (C) 2008 Elsevier B.V. All rights reserved.

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收藏

页码：233 / 239

页数：7

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