Voltage mirror circuit by carbon nanotube field effect transistors for mirroring dynamic random access memories in multiple-valued logic and fuzzy logic

被引：8
作者：
Jasemi, Masoomeh [1 ]
Mirzaee, Reza Faghih [2 ]
Navi, Keivan [3 ]
Bagherzadeh, Nader [4 ,5 ]
机构：
[1] Inst Res Fundamental Sci IPM, Sch Comp Sci, Tehran 1953833511, Iran
[2] Islamic Azad Univ, Shahr E Qods Branch, Dept Comp Engn, Tehran 37541374, Iran
[3] Shahid Beheshti Univ, Fac Elect & Comp Engn, GC, Tehran 1983963113, Iran
[4] Univ Calif Irvine, Dept Elect Engn & Comp Sci, Irvine, CA 92697 USA
[5] Univ Calif Irvine, CPCC, Irvine, CA 92697 USA
来源：
IET CIRCUITS DEVICES & SYSTEMS | 2015年 / 9卷 / 05期
关键词：
carbon nanotube field effect transistors; DRAM chips; multivalued logic; fuzzy logic; VLSI; voltage mirror circuit; dynamic random access memories; multiple-valued logic; fanout circuit; very large-scale integration application; C; HIGH-PERFORMANCE ELECTRONICS; DESIGN; SINGLE; DEVICES; GATES; CMOS;
D O I：
10.1049/iet-cds.2014.0295
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new voltage mirror circuit by using carbon nanotubes (CNTs) technology is presented. This circuit is specifically proposed for the application of duplicating multiple-valued and fuzzy dynamic random access memories. The given structure prevents any voltage drop for the capacitor inside the memory cell. As a result, any fanout circuit can be driven. The new structure can be utilised for different multiple-valued logic systems without a change. The unique characteristics of carbon nanotube field effect transistor (CNFET) technology are exploited in this paper to meet the desired design goals. It demonstrates the potentials of CNFET technology in a realistic very large-scale integration application. The proposed design is highly tolerant to D-CNT variation and it is also immune to misaligned CNTs. Simulation results demonstrate that it provides sufficient driving capability with reasonable accuracy.
引用
收藏
页码：343 / 352
页数：10
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