High spatial resolution grain orientation and strain mapping in thin films using polychromatic submicron x-ray diffraction

被引:74
作者
Tamura, N
MacDowell, AA
Celestre, RS
Padmore, HA
Valek, B
Bravman, JC
Spolenak, R
Brown, WL
Marieb, T
Fujimoto, H
Batterman, BW
Patel, JR
机构
[1] Adv Light Source, Berkeley, CA 94720 USA
[2] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[3] Lucent Technol, Agere Syst, Murray Hill, NJ 07974 USA
[4] Intel Corp, Santa Clara, CA 95052 USA
[5] Intel Corp, Portland, OR 97124 USA
[6] Stanford Synchrotron Radiat Lab, Stanford, CA 94309 USA
关键词
D O I
10.1063/1.1477621
中图分类号
O59 [应用物理学];
学科分类号
摘要
The availability of high brilliance synchrotron sources, coupled with recent progress in achromatic focusing optics and large area two-dimensional detector technology, has allowed us to develop an x-ray synchrotron technique that is capable of mapping orientation and strain/stress in polycrystalline thin films with submicron spatial resolution. To demonstrate the capabilities of this instrument, we have employed it to study the microstructure of aluminum thin film structures at the granular and subgranular levels. Due to the relatively low absorption of x-rays in materials, this technique can be used to study passivated samples, an important advantage over most electron probes given the very different mechanical behavior of buried and unpassivated materials. (C) 2002 American Institute of Physics.
引用
收藏
页码:3724 / 3726
页数:3
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