The metal-insulator transition in quasicrystals

被引：20

作者：

Lin, CR ^{[1
]}

Chou, SL ^{[1
]}

Lin, ST ^{[1
]}

机构：

[1] NATL CHENG KUNG UNIV,DEPT PHYS,TAINAN 70101,TAIWAN

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1996年 / 8卷 / 49期

关键词：

ICOSAHEDRAL QUASI-CRYSTAL; AL-CU-FE; TUNNELING EXPERIMENTS; QUANTUM CORRECTIONS; ALLOYS; CONDUCTIVITY; TRANSPORT; BEHAVIOR; SYSTEMS;

D O I：

10.1088/0953-8984/8/49/002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have found that the metal-insulator transition can occur in AI-Pd-Re alloys on choosing the annealing conditions appropriately, and McMillan's scaling theory of the metal-insulator transition in amorphous materials can be applied to quasicrystals equally well. That is, the low-temperature conductivity on the metallic side of the metal-insulator transition varies as sigma(T)=sigma(0)(1+root/Delta), and the determined value of the correlation gap Delta, spanning about five orders of magnitude, is proportional to the inverse of the square of the zero-temperature resistivity rho(0).

引用

页码：L725 / L730

页数：6

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