Impedance Spectroscopy Characterization in Bipolar Ta/MnOx/Pt Resistive Switching Thin Films

被引：8

作者：

Park, Chan-Rok ^{[1
]}

Choi, Sun-Young ^{[2
]}

You, Yil-Hwan ^{[1
]}

Yang, Min Kyu ^{[2
]}

Bae, Seung-Muk ^{[1
]}

Lee, Jeon-Kook ^{[2
]}

Hwang, Jin-Ha ^{[1
]}

机构：

[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea

[2] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 2013年 / 96卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

RESISTANCE;

D O I：

10.1111/jace.12185

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Impedance spectroscopy was applied to MnOx-based thin films prepared in symmetric and asymmetric electrode configurations, i.e., Pt/MnOx/Pt and Ta/MnOx/Pt, respectively. Equivalent circuit analysis suggests the presence of higher resistance surface layers adjacent the electrodes, in addition to a higher conductivity component at central portions of the MnOx thin films. The asymmetric configuration enables the Ta/MnOx interfacial layer to facilitate the redox transport of oxygen ions, where significant changes in resistance with the electric field are responsible for the higher on/off resistance ratio in Ta/MnOx/Pt. The higher dielectric constant and bias-dependent capacitance and resistance support the coexistence of both oxidized surfaces and interfacial layers.

引用

页码：1234 / 1239

页数：6

共 34 条

[11] LOW-FREQUENCY NEGATIVE RESISTANCE IN THIN ANODIC OXIDE FILMS [J].

HICKMOTT, TW .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) :2669-&

[12] Impedance spectroscopy of TiO2 thin films showing resistive switching [J].

Jeong, Doo Seok ;

Schroeder, Herbert ;

Waser, Rainer .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[13]

Jeong DS, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1968416, 10.1063/1.1865326]

[14] Electrical and dielectrical properties of the MnO2 doped with As2O3 and SnO [J].

Kayan, A ;

Tarcan, E ;

Kadiroglu, U ;

Esmer, K .

MATERIALS LETTERS, 2004, 58 (16) :2170-2174

[15] Observation of bistable resistance memory switching in CuO thin films [J].

Kim, C. H. ;

Jang, Y. H. ;

Hwang, H. J. ;

Sun, Z. H. ;

Moon, H. B. ;

Cho, J. H. .

APPLIED PHYSICS LETTERS, 2009, 94 (10)

[16] The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications [J].

Lee, Joonmyoung ;

Choi, Hyejung ;

Seong, Dong-jun ;

Yoon, Jaesik ;

Park, Jubong ;

Jung, Seungjae ;

Lee, Wootae ;

Chang, Man ;

Cho, Chunhum ;

Hwang, Hyunsang .

MICROELECTRONIC ENGINEERING, 2009, 86 (7-9) :1933-1935

[17] Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy [J].

Lee, Min Hwan ;

Kim, Kyung Min ;

Kim, Gun Hwan ;

Seok, Jun Yeong ;

Song, Seul Ji ;

Yoon, Jung Ho ;

Hwang, Cheol Seong .

APPLIED PHYSICS LETTERS, 2010, 96 (15)

[18] Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoate [J].

Ling, QD ;

Song, Y ;

Ding, SJ ;

Zhu, CX ;

Chan, DSH ;

Kwong, DL ;

Kang, ET ;

Neoh, KG .

ADVANCED MATERIALS, 2005, 17 (04) :455-+

[19] Impedance study of reproducible switching memory effect [J].

Papagianni, C ;

Nian, YB ;

Wang, YQ ;

Wu, NJ ;

Ignatiev, A .

2004 NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM, PROCEEDINGS, 2004, :125-128

[20] SEMICONDUCTOR PROPERTIES OF MANGANESE-DIOXIDE [J].

PREISLER, E .

JOURNAL OF APPLIED ELECTROCHEMISTRY, 1976, 6 (04) :311-320

← 1 2 3 4 →