Impedance Spectroscopy Characterization in Bipolar Ta/MnOx/Pt Resistive Switching Thin Films

被引:8
作者
Park, Chan-Rok [1 ]
Choi, Sun-Young [2 ]
You, Yil-Hwan [1 ]
Yang, Min Kyu [2 ]
Bae, Seung-Muk [1 ]
Lee, Jeon-Kook [2 ]
Hwang, Jin-Ha [1 ]
机构
[1] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea
[2] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 136791, South Korea
基金
新加坡国家研究基金会;
关键词
RESISTANCE;
D O I
10.1111/jace.12185
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Impedance spectroscopy was applied to MnOx-based thin films prepared in symmetric and asymmetric electrode configurations, i.e., Pt/MnOx/Pt and Ta/MnOx/Pt, respectively. Equivalent circuit analysis suggests the presence of higher resistance surface layers adjacent the electrodes, in addition to a higher conductivity component at central portions of the MnOx thin films. The asymmetric configuration enables the Ta/MnOx interfacial layer to facilitate the redox transport of oxygen ions, where significant changes in resistance with the electric field are responsible for the higher on/off resistance ratio in Ta/MnOx/Pt. The higher dielectric constant and bias-dependent capacitance and resistance support the coexistence of both oxidized surfaces and interfacial layers.
引用
收藏
页码:1234 / 1239
页数:6
相关论文
共 34 条
[1]   Toward a universal memory [J].
Åkerman, J .
SCIENCE, 2005, 308 (5721) :508-510
[2]   Resistive Random Access Memory (ReRAM) Based on Metal Oxides [J].
Akinaga, Hiroyuki ;
Shima, Hisashi .
PROCEEDINGS OF THE IEEE, 2010, 98 (12) :2237-2251
[3]   Reproducible switching effect in thin oxide films for memory applications [J].
Beck, A ;
Bednorz, JG ;
Gerber, C ;
Rossel, C ;
Widmer, D .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141
[4]   Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications [J].
Choi, DH ;
Lee, D ;
Sim, H ;
Chang, M ;
Hwang, HS .
APPLIED PHYSICS LETTERS, 2006, 88 (08)
[5]   Resistive switching in metal-ferroelectric-metal junctions [J].
Contreras, JR ;
Kohlstedt, H ;
Poppe, U ;
Waser, R ;
Buchal, C ;
Pertsev, NA .
APPLIED PHYSICS LETTERS, 2003, 83 (22) :4595-4597
[6]   XPS STUDY OF MNO OXIDATION [J].
DICASTRO, V ;
POLZONETTI, G .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1989, 48 (1-2) :117-123
[7]   SWITCHING PROPERTIES OF THIN NIO FILMS [J].
GIBBONS, JF ;
BEADLE, WE .
SOLID-STATE ELECTRONICS, 1964, 7 (11) :785-&
[8]   Effective work function of Pt, Pd, and Re on atomic layer deposited HfO2 [J].
Gu, Diefeng ;
Dey, Sandwip K. ;
Majhi, Prashant .
APPLIED PHYSICS LETTERS, 2006, 89 (08)
[9]   Ultra-high-density phase-change storage and memory [J].
Hamann, HF ;
O'Boyle, M ;
Martin, YC ;
Rooks, M ;
Wickramasinghe, K .
NATURE MATERIALS, 2006, 5 (05) :383-387
[10]   BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES [J].
HIATT, WR ;
HICKMOTT, TW .
APPLIED PHYSICS LETTERS, 1965, 6 (06) :106-&