共 25 条
Growth of III-nitride quantum dots and their applications to blue-green LEDs
被引:22
作者:
Moustakas, T. D.
[1
,2
]
Xu, Tao
[1
,2
]
Thomidis, C.
[1
,2
]
Nikiforov, A. Yu
[1
,2
]
Zhou, Lin
[3
,4
]
Smith, David J.
[3
,4
]
机构:
[1] Boston Univ, Ctr Photon Res, Boston, MA 02215 USA
[2] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[3] Arizona State Univ, Sch Mat, Tempe, AZ 85287 USA
[4] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA
来源:
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
2008年
/
205卷
/
11期
关键词:
D O I:
10.1002/pssa.200880222
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
In this paper we discuss the growth of InN, GaN and InGaN QDs by MBE on either GaN or AlN templates, InN QDs on GaN templates were found to occur without an InN wetting layer, a result consistent with the large lattice mismatch of 11% between InN and GaN. Self-assembled GaN QDs were grown on AlN templates, using the modified Stranski-Krastanov mode of growth. The microstructure and the size distribution of such QDs in a single layer or a superlattice structure were investigated by electron microscopy and atomic force microscopy. Finally, the self assembly of InGaN QDs on GaN templates using the Stranski-Krastanov mode and the applications of such QDs to blue-green LEDs are addressed. The results indicate that InGaN / GaN multiple quantum dots (MQDs) are highly strained and their emission at low injection is red shifted with respect to that of a single layer of QDs due to quantum confined Stark effect. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码:2560 / 2565
页数:6
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