FinFET reliability study by forward gated-diode generation-recombination current

被引：4

作者：

Ma, Chenyue ^{[1
]}

Li, Bo ^{[2
]}

Wei, Yiqun ^{[2
]}

Zhang, Lining ^{[1
,2
]}

He, Jin ^{[1
,2
]}

Zhang, Xing ^{[1
]}

Lin, Xinnan ^{[2
]}

Chan, Mansun ^{[3
]}

机构：

[1] Peking Univ, EECS, Inst Microelect, Beijing 100871, Peoples R China

[2] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen 518055, Peoples R China

[3] Hong Kong Univ Sci & Technol, Dept ECE, Kowloon, Hong Kong, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 07期

关键词：

D O I：

10.1088/0268-1242/23/7/075008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination (G-R) current. The current-voltage characteristics of a FinFET are measured for parameter extraction and a mathematical algorithm is used to extract the stress-induced interface states and oxide traps of the FinFET from the G-R current measurement. It is observed that the stress-induced interface states and oxide traps can be distinguished by observing the shift of the peak G-R current in the body current (I-b) versus gate voltage (V-g) characteristic. The interface states cause a change in the maximum G-R current (Delta I-peak) while the oxide traps result in a shift of the gate voltage (Delta V-g) corresponding to the Delta I-peak. Unlike bulk MOSFETs, the dominant degradation mechanism of FinFETs is found to be the oxide traps formation rather than the interface states generation.

引用

页数：8

共 17 条

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