Schottky barrier formation for passivated semiconductor surfaces

被引：10
|
作者：
SaizPardo, R
Rincon, R
Flores, F
机构：
[1] Depto. Fis. Materia Condensada C-XII, Facultad de Ciencias, Univ. Autónoma de Madrid
来源：
APPLIED SURFACE SCIENCE | 1996年 / 92卷
关键词：
D O I：
10.1016/0169-4332(95)00256-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect on the Schottky barrier height of H-monolayer passivation of the Si(111) surface is explored. In our calculations we have analyzed K/Si(111) interfaces (theta = 1/3 ML) with and without a H interlayer. Our results show that the effect of passivation is to reduce the Schottky barrier height, phi(bn), by 0.23 eV. Comparison is made with previous results on passivated GaAs(110) surfaces.
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页码：362 / 366
页数：5
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