Schottky barrier formation for passivated semiconductor surfaces

被引：10
|
作者：
SaizPardo, R
Rincon, R
Flores, F
机构：
[1] Depto. Fis. Materia Condensada C-XII, Facultad de Ciencias, Univ. Autónoma de Madrid
来源：
APPLIED SURFACE SCIENCE | 1996年 / 92卷
关键词：
D O I：
10.1016/0169-4332(95)00256-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect on the Schottky barrier height of H-monolayer passivation of the Si(111) surface is explored. In our calculations we have analyzed K/Si(111) interfaces (theta = 1/3 ML) with and without a H interlayer. Our results show that the effect of passivation is to reduce the Schottky barrier height, phi(bn), by 0.23 eV. Comparison is made with previous results on passivated GaAs(110) surfaces.
引用
收藏
页码：362 / 366
页数：5
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