Metal Insulator Transition in Ga doped ZnO thin films

被引：0

作者：

Naidu, R. V. Muniswami ^{[1
]}

Subrahmanyam, Aryasomayajula ^{[1
]}

Verger, Arnaud ^{[2
]}

Jain, M. K. ^{[1
]}

Rao, S. V. N. Bhaskara ^{[3
]}

Jha, S. N. ^{[4
]}

Phase, D. M. ^{[5
]}

机构：

[1] Indian Inst Technol, Dept Phys, Madras 600036, Tamil Nadu, India

[2] St Gobain Res, F-93303 Aubervilliers, France

[3] Bhabha Atom Res Ctr, Atom & Mol Phys Div, Mumbai 400085, Maharashtra, India

[4] Bhabha Atom Res Ctr, Appl Spect Div, Mumbai 400085, Maharashtra, India

[5] UGC, DAE Consortium Sci Res, Indore 452001, India

来源：

INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE & TECHNOLOGY | 2012年 / 1451卷

关键词：

Ga doping; Metal insulator transition; ZnO thin films; Weak localization;

D O I：

10.1063/1.4732383

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gallium (Ga) doped Zinc Oxide (ZnO) thin films are grown at room temperature (300 K) by reactive pulsed DC magnetron sputtering technique using 2 wt% and 4 wt% Ga doped ZnO targets. The temperature dependent resistivity studies have shown a semiconducting behavior with negative temperature coefficient of resistance for 2wt % Ga doped samples. A metal insulator transition (MIT) is observed for 4 wt % Ga doped targets, the possible reason for MIT may be attributed to the dopant disorder based localization for charge carriers at low temperatures.

引用

页码：109 / 111

页数：3

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