Basic principles of STT-MRAM cell operation in memory arrays

被引：455
|
作者：
Khvalkovskiy, A. V. [1 ]
Apalkov, D. [1 ]
Watts, S. [1 ]
Chepulskii, R. [1 ]
Beach, R. S. [1 ]
Ong, A. [1 ]
Tang, X. [1 ]
Driskill-Smith, A. [1 ]
Butler, W. H. [2 ,3 ]
Visscher, P. B. [2 ,3 ]
Lottis, D. [1 ]
Chen, E. [1 ]
Nikitin, V. [1 ]
Krounbi, M. [1 ]
机构：
[1] Samsung Elect, Semicond R&D Ctr Grandis, San Jose, CA 95134 USA
[2] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA
[3] Univ Alabama, Dept Phys, Tuscaloosa, AL 35487 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2013年 / 46卷 / 07期
关键词：
SPIN-TRANSFER-TORQUE; MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; ATOMIC LAYERS; MAGNETORESISTANCE; MGO; TIME; ANISOTROPY; PROSPECTS; BARRIERS;
D O I：
10.1088/0022-3727/46/7/074001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
For reliable operation, individual cells of an STT-MRAM memory array must meet specific requirements on their performance. In this work we review some of these requirements and discuss the fundamental physical principles of STT-MRAM operation, covering the range from device level to chip array performance, and methodology for its development.
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页数：20
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