Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom

被引：38
作者：
Wang, Dandan [1 ,2 ,3 ]
Fracasso, Davide [1 ,2 ,3 ]
Nurbawono, Argo [4 ]
Annadata, Harshini V. [1 ,2 ,3 ]
Sangeeth, C. S. Suchand [1 ,2 ,3 ]
Yuan, Li [1 ,2 ,3 ]
Nijhuis, Christian A. [1 ,2 ,3 ]
机构：
[1] Natl Univ Singapore, Dept Chem, Singapore 117543, Singapore
[2] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore
[3] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore
[4] Natl Univ Singapore, Dept Phys, Singapore 117551, Singapore
来源：
ADVANCED MATERIALS | 2015年 / 27卷 / 42期
基金：
新加坡国家研究基金会;
关键词：
SELF-ASSEMBLED MONOLAYERS; MOLECULAR ELECTRONICS; QUANTUM INTERFERENCE; CHARGE-TRANSPORT; METAL; DEPOLARIZATION; RECTIFICATION; CONSTANT; IMPACT; FORCES;
D O I：
10.1002/adma.201502968
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)(11)X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a fourfold increase of the dielectric constant (epsilon(r)) with increasing polarizability of X are found.
引用
收藏
页码：6689 / +
页数：8
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