Comparison of transport and defects properties in hydrogenated polymorphous and amorphous silicon

被引:16
作者
Bronner, W
Kleider, JP
Brüggemann, R
Cabarrocas, PR
Mencaraglia, D
Mehring, M
机构
[1] Univ Paris 06, Ecole Super Elect, CNRS UMR 8507, Lab Genie Elect Paris, F-91192 Gif Sur Yvette, France
[2] Univ Paris 11, Ecole Super Elect, CNRS UMR 8507, Lab Genie Elect Paris, F-91192 Gif Sur Yvette, France
[3] Univ Stuttgart, Inst Phys 2, D-70569 Stuttgart, Germany
[4] Carl von Ossietzky Univ Oldenburg, Fachbereich Phys, D-26111 Oldenburg, Germany
[5] Ecole Polytech, CNRS UMR7647, Phys Interfaces & Couches Minces Lab, F-91128 Palaiseau, France
关键词
D O I
10.1016/S0022-3093(01)01201-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Due to its specific microstructure with nanocrystals embedded in an amorphous matrix, polymorphous silicon (pm-Si:H) has been shown to present interesting properties for large area electronic applications. In particular, this material exhibits a lower density of localized gap states and better transport properties than standard amorphous silicon (a-Si:H) after light-soaking. In this paper. we focus our attention on the comparison of electronic transport and defect properties of both materials, The temperature-dependent photocurrent is similar to that of high-quality a-Si:H: it shows thermal quenching in the temperature range around 250 K and becomes temperature-independent at temperatures smaller than about 40 K. Electrically detected magnetic resonance (EDMR) under illumination was performed from 296 K down to 10 K to cover a very wide temperature range wherein the photocurrent is dominated either by free electrons in the band (higher temperatures) or by energy-loss hopping (lower temperatures). The comparison with the EDMR properties of a-Si:H and muc-Si:H assists in the interpretation of the results, thereby clarifying the influence of the incorporated nanocrystals on the recombination physics in pm-Si:H. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:551 / 555
页数:5
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