Leakage current behaviors of acceptor- and donor-doped (Ba0.5Sr0.5)TiO3 thin films

被引：53
作者：
Kim, SS
Park, C
机构：
[1] Sunchon Natl Univ, Dept Met Engn & Mat Sci, Sunchon 540742, South Korea
[2] Hyundai Elect Ind Co Ltd, Semicond Adv Res Div, Icheon 467860, Kyungki Do, South Korea
来源：
APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 17期
关键词：
D O I：
10.1063/1.125075
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the effects of acceptor and donor doping on the leakage current behavior of Pt/(Ba0.5Sr0.5)TiO3/Pt film capacitors prepared by a pulsed-laser deposition method. We selected Mn/Al and Nb as acceptor and donor dopants, respectively. The leakage current behavior depends strongly on the type of dopants. Al doping decreases the leakage current level, and Mn doping decreases it further. Nb doping greatly increases it. The decrease in leakage current associated with acceptor doping seems to partly result from a decrease in tunneling current due to expansion of the depletion layer width. The converse appears to apply with donor doping. (C) 1999 American Institute of Physics. [S0003-6951(99)02843-0].
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页码：2554 / 2556
页数：3
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