Spontaneous spin coherence in n-GaAs produced by ferromagnetic proximity polarization -: art. no. 121202

被引：72
作者：
Epstein, RJ [1 ]
Malajovich, I [1 ]
Kawakami, RK [1 ]
Chye, Y [1 ]
Hanson, M [1 ]
Petroff, PM [1 ]
Gossard, AC [1 ]
Awschalom, DD [1 ]
机构：
[1] Univ Calif Santa Barbara, Ctr Spintron & Quantum Computat, Santa Barbara, CA 93106 USA
来源：
PHYSICAL REVIEW B | 2002年 / 65卷 / 12期
关键词：
D O I：
10.1103/PhysRevB.65.121202
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We find that photoexcited electrons in an n-GaAs epilayer rapidly (<50 ps) spin polarize due to the proximity of an epitaxial ferromagnetic metal. Comparison between MnAs/GaAs and Fe/GaAs structures reveals that this coherent spin polarization is aligned antiparallel and parallel to their magnetizations, respectively. In addition, the GaAs nuclear spins are dynamically polarized with a sign determined by the spontaneous electron-spin orientation. In Fe/GaAs, competition between nuclear hyperfine and applied magnetic fields results in complete quenching of electron-spin precession.
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收藏
页码：1212021 / 1212024
页数：4
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