Effect of substrate temperature on conductivity and microstructures of boron-doped silicon nanocrystals in SiCx thin films

被引：4

作者：

Cheng, Qiang ^{[1
]}

Zeng, Yuheng ^{[1
]}

Huang, Junjun ^{[1
]}

Dai, Ning ^{[1
,2
]}

Yang, Ye ^{[1
]}

Tan, Ruiqin ^{[3
]}

Liang, Xingbo ^{[4
]}

Song, Weijie ^{[1
]}

机构：

[1] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China

[4] Ningbo QL Elect Co Ltd, Ningbo 315800, Zhejiang, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2013年 / 53卷

基金：

中国博士后科学基金;

关键词：

Boron doped silicon nanocrystal; Substrate temperature; Face-centered cubic (fcc); RAMAN; CRYSTALLIZATION;

D O I：

10.1016/j.physe.2013.04.006

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Boron (B)-doped silicon-rich SiC (SiCx, 0 < x < 1) thin films were deposited using magnetron sputtering (MS) and annealed in a tube furnace. The effect of substrate temperature (T-s) on the conductivity and microstructures of the annealed B-doped SiCx thin films were studied. The crystalline fraction increased by 5%, while the conductivity increased by 10-100 times, in the annealed thin films deposited at about 200 degrees C, comparing to that deposited at RT -400 degrees C. The face-centered cubic (fcc) Si nanocrystals (Si-NCs) formed in the surface layer when T-s was about 200 degrees C. It was suggested that T-s influenced the crystallization, conductivity and even the microstructures of Si-NCs. The proper T-s was helpful to improve the crystallization and conductivity of the B-doped Si-NCs in SiCx thin film. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：36 / 40

页数：5

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