Phase transitions in two dimensions: The case of Sn adsorbed on Ge(111) surfaces

被引：62
作者：
Bunk, O
Zeysing, JH
Falkenberg, G
Johnson, RL
Nielsen, M
Nielsen, MM
Feidenhans, R
机构：
[1] Univ Hamburg, Inst Expt Phys 2, D-22761 Hamburg, Germany
[2] Riso Natl Lab, Condensed Matter Phys & Chem Dept, DK-4000 Roskilde, Denmark
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 83卷 / 11期
关键词：
D O I：
10.1103/PhysRevLett.83.2226
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Accurate atomic coordinates of the room-temperature (root 3 x root 3)R30 degrees and low-temperature (3 x 3) phases of 1/3 monolayer Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are located solely at T-4 sites in the (root 3 x root 3)R30 degrees structure. In the low-temperature phase one of the three Sn atoms per (3 x 3) unit cell is displaced outwards by 0.26 +/- 0.04 Angstrom relative to the other two. This displacement is accompanied by an increase in the first to second double-layer spacing in the Ge substrate.
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页码：2226 / 2229
页数：4
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