Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure

被引：72

作者：

Pisoni, Riccardo ^{[1
]}

Lei, Zijin ^{[1
]}

Back, Patrick ^{[2
]}

Eich, Marius ^{[1
]}

Overweg, Hiske ^{[1
]}

Lee, Yongjin ^{[1
]}

Watanabe, Kenji ^{[3
]}

Taniguchi, Takashi ^{[3
]}

Ihn, Thomas ^{[1
]}

Ensslin, Klaus ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Dept Phys, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[2] Swiss Fed Inst Technol, Inst Quantum Elect, Dept Phys, CH-8093 Zurich, Switzerland

[3] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 12期

基金：

瑞士国家科学基金会;

关键词：

TRANSPORT; STATES;

D O I：

10.1063/1.5021113

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated an encapsulated monolayer MoS2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm(2)/Vs at a density of 7 x 10(12) cm(-2) at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram. Published by AIP Publishing.

引用

页数：3

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