Characterization of residual stress in metallic films on silicon with micromechanical devices

被引：0
|
作者：
Boutry, M [1 ]
Bosseboeuf, A [1 ]
Coffignal, G [1 ]
机构：
[1] UNIV PARIS 11,URA CNRS 22,INST ELECT FONDAMENTALE,F-91405 ORSAY,FRANCE
来源：
MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY II | 1996年 / 2879卷
关键词：
stress; micromechanical devices; metallic film; FEM simulations; surface micromachining;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：126 / 134
页数：9
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