Characterization of residual stress in metallic films on silicon with micromechanical devices

被引：0

作者：

Boutry, M ^{[1
]}

Bosseboeuf, A ^{[1
]}

Coffignal, G ^{[1
]}

机构：

[1] UNIV PARIS 11,URA CNRS 22,INST ELECT FONDAMENTALE,F-91405 ORSAY,FRANCE

来源：

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY II | 1996年 / 2879卷

关键词：

stress; micromechanical devices; metallic film; FEM simulations; surface micromachining;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：126 / 134

页数：9

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