A crystalline D-π-A organic small molecule with naphtho[1,2-b:5,6-b′]dithiophene-core for solution processed organic solar cells

被引：23

作者：

Dutta, Pranabesh ^{[1
]}

Park, Hanok ^{[1
]}

Lee, Woo-Hyoung ^{[2
]}

Kang, In-Nam ^{[2
]}

Lee, Soo-Hyoung ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Jeonju 561756, South Korea

[2] Catholic Univ, Dept Chem, Buchen Si 420743, Gyeonggi Do, South Korea

来源：

ORGANIC ELECTRONICS | 2012年 / 13卷 / 12期

关键词：

Small molecules; Naphtho[12-b:5,6-b ']dithiophene; Solution-processable; Organic solar cells; Power conversion efficiency; OPEN-CIRCUIT VOLTAGE; POWER-CONVERSION EFFICIENCY; LOW-BAND-GAP; PHOTOVOLTAIC CELLS; CONJUGATED POLYMER; SOLVENT ADDITIVES; PHASE-SEPARATION; FILL FACTOR; PERFORMANCE; ACCEPTOR;

D O I：

10.1016/j.orgel.2012.09.019

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we have designed and synthesized a new naphtho[1,2-b:5,6-b'] dithiophene-containing enlarged pi-conjugated donor-acceptor (D-A) small molecule, NDT(TTz)(2), for use in solution-processed organic photovoltaics. NDT(TTz)(2), which contains a thiophene-bridged naphtho[1,2-b:5,6-b'] dithiophene as the central fused core and triphenylamine-flanked thiophene thiazolothiazole as a spacer, was synthesized via sequential Suzuki and Stille coupling reactions. The thermal, physiochemical, and electrochemical properties of NDT(TTz)(2) have been evaluated by differential scanning calorimetry, thermogravimetry, UV-Vis spectroscopy, photoluminescence spectroscopy, X-ray diffraction, and cyclic voltammetry. As desired for photovoltaic applications, NDT(TTz)(2) possesses good solubility, thermal stability, and a well-ordered, pi-pi stacked, crystallinity. The optical band gap and HOMO level of NDT(TTz)(2) were determined to be 2.0 eV and -5.23 eV, respectively. In addition to organic thin film transistor studies, application of NDT(TTz)(2) to preliminary photovoltaic devices has also been investigated by fabricating solution-processed bulk heterojunction solar cells together with PC71BM in a typical layered device structure, ITO/PEDOT:PSS/NDT(TTz)(2):PC71BM/LiF/Al. Without extensive optimization of the device, NDT(TTz)(2) in these devices shows a maximum power conversion efficiency of 1.44% under AM 1.5 illumination at a 100 mW/cm(2) intensity. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：3183 / 3194

页数：12

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