Study of CdSSe:V and CdMnTe:V photorefractive effect

被引：6

作者：

Chattopadhyay, K ^{[1
]}

Pour, KM ^{[1
]}

Egarievwe, SU ^{[1
]}

Ndap, JO ^{[1
]}

Chen, H ^{[1
]}

Ma, X ^{[1
]}

Morgan, S ^{[1
]}

Burger, A ^{[1
]}

机构：

[1] Fisk Univ, Dept Phys, Ctr Photon Mat & Devices, Nashville, TN 37208 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1999年 / 28卷 / 06期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

CdMnTe; CdSSe; photorefractive; photorefractive gain; photorefractivity; two-beam coupling;

D O I：

10.1007/s11664-999-0051-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A large photorefractive effect was measured in CdS0.8 Se-0.2:V and Cd0.55Mn0.45Te:V ternary crystals which shows promise for many device applications such as optical signal processing and optical limiting. In this study, we compared the results obtained from two-wave mixing experiments with Cd0.55Mn0.45Te:V and CdS0.8Se0.2:V crystals at the 633 nm wavelength. As the signal to pump beam ratio was varied from 10(-1) to 10(-4), Cd0.55Mn0.45Te:V and CdS0.8Se0.2:V showed a maximum photorefractive gain of 0.17 and 0.20 cm(-1), respectively. The grating formation time of both the crystals were measured to be in the milli-second range at an incident intensity of 200 mW/cm(2).

引用

页码：666 / 669

页数：4

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