Graphene nano-heterostructures for quantum devices

被引：14

作者：

Bischoff, D. ^{[1
]}

Eich, M. ^{[1
]}

Varlet, A. ^{[1
]}

Simonet, P. ^{[1
]}

Overweg, H. C. ^{[1
]}

Ensslin, K. ^{[1
]}

Ihn, T. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Solid State Phys Lab, CH-8093 Zurich, Switzerland

来源：

MATERIALS TODAY | 2016年 / 19卷 / 07期

基金：

瑞士国家科学基金会;

关键词：

HEXAGONAL BORON-NITRIDE; TOPOLOGICAL VALLEY TRANSPORT; DIRAC FERMIONS; TRANSITION; CONFINEMENT; GENERATION; MEMBRANES; JUNCTIONS; CRYSTALS; SPIN;

D O I：

10.1016/j.mattod.2016.02.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ten years ago, the exfoliation of graphene started the field of layered two-dimensional materials. Today, there is a huge variety of two-dimensional materials available for both research and applications. The different dimensionality compared to their bulk relatives is responsible for a wealth of novel properties of these layered two-dimensional materials. The true strength of two-dimensional materials is however the possibility to stack different layers on top of each other to engineer new heterostructures with specifically tailored properties. Known as van-der-Waals heterostructures, they enable the experimental observation of a variety of new phenomena. By patterning the individual layers laterally into nanostructures, additional functionality can be added to the devices. This review provides a glimpse at the future opportunities offered by van-der-Waals stacked nanodevices.

引用

页码：375 / 381

页数：7

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