MBE growth of lattice-matched ZnCdMgSe quaternaries and ZnCdMgSe/ZnCdSe quantum wells on InP substrates

被引：44

作者：

Tamargo, MC

Cavus, A

Zeng, LF

Dai, N

Bambha, N

Gray, A

Semendy, F

Krystek, W

Pollak, FH

机构：

[1] CUNY CITY COLL,DEPT CHEM,NEW YORK,NY 10031

[2] CUNY CITY COLL,NY STATE CTR ADV TECHNOL ULTRAFAST PHOTON MAT & A,NEW YORK,NY 10031

[3] USA,OFS,IR OPT TECHNOL,FT BELVOIR,VA 22060

[4] CUNY BROOKLYN COLL,DEPT PHYS,BROOKLYN,NY 11210

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1996年 / 25卷 / 02期

关键词：

II-VI compounds; II-VI/III-V heteroepitaxy; blue emitters; molecular beam epitaxy; wide bandgap semiconductors; (Zn; Cd; Mg)Se;

D O I：

10.1007/BF02666254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the growth and characterization of a new wide bandgap II-VI alloy, ZnxCdyMg1-x-ySe, grown lattice-matched to InP. High quality quaternary layers with bandgaps ranging from 2.4 to 3.1 eV were grown by molecular beam epitaxy. The bandgaps and lattice constants were measured using photoluminescence and single crystal Theta-2 Theta scans. Quantum well structures with quaternary barriers and ZnCdSe wells were also grown, entirely lattice matched to InP. Their photoluminescence properties suggest that these materials are suitable for the design of visible semiconductor lasers spanning the blue, green, and yellow regions of the visible range. The absence of strain in these heterostructures is expected to improve the reliability of the materials in device applications.

引用

页码：259 / 262

页数：4

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