A new structure design of a silicon-on-insulator MOSFET reducing the self-heating effect

被引：9

作者：

Awadallah, R ^{[1
]}

Yuan, JS ^{[1
]}

机构：

[1] Univ Cent Florida, Dept Elect & Comp Engn, Orlando, FL 32816 USA

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1999年 / 86卷 / 06期

关键词：

D O I：

10.1080/002072199133166

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new silicon-on-insulator (SOI) device structure is proposed. The new design provides a heat conducting path between the channel and substrate. The device has been verified in two-dimensional device simulation. This new structure reduces device self-heating and increases the drain of the SOI MOSFET.

引用

页码：707 / 712

页数：6

共 13 条

[1] MODELING FOR FLOATING BODY EFFECTS IN FULLY DEPLETED SOI MOSFETS [J].

CHEN, HTH ;

HUANG, RS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :583-590

[2] ANALYSIS AND CONTROL OF FLOATING-BODY BIPOLAR EFFECTS IN FULLY DEPLETED SUBMICROMETER SOI MOSFETS [J].

CHOI, JY ;

FOSSUM, JG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) :1384-1391

[3] Fully-depleted SOI CMOS for analog applications [J].

Colinge, JP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (05) :1010-1016

[4]

COLINGE JP, 1991, SILICON INSULATOR

[5] SCALING CONSTRAINTS IMPOSED BY SELF-HEATING IN SUBMICRON SOI MOSFETS [J].

DALLMANN, DA ;

SHENAI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (03) :489-496

[6] Approaches to extra low voltage DRAM operation by SOI-DRAM [J].

Eimori, T ;

Oashi, T ;

Morishita, F ;

Iwamatsu, T ;

Yamaguchi, Y ;

Okuda, F ;

Shimomura, K ;

Shimano, H ;

Sakashita, N ;

Arimoto, K ;

Inoue, Y ;

Komori, S ;

Inuishi, M ;

Nishimura, T ;

Miyoshi, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (05) :1000-1009

[7] SOI MOSFET EFFECTIVE CHANNEL MOBILITY [J].

SHERONY, MJ ;

SU, LT ;

CHUNG, JE ;

ANTONIADIS, DA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) :276-278

[8] SPICE MODEL AND PARAMETERS FOR FULLY-DEPLETED SOI MOSFETS INCLUDING SELF-HEATING [J].

SU, LT ;

ANTONIADIS, DA ;

ARORA, ND ;

DOYLE, BS ;

KRAKAUER, DB .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) :374-376

[9] MEASUREMENT AND MODELING OF SELF-HEATING IN SOI NMOSFETS [J].

SU, LT ;

CHUNG, JE ;

ANTONIADIS, DA ;

GOODSON, KE ;

FLIK, MI .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (01) :69-75

[10]

*TMA INC, 1993, MEDICI 2 DIM SEM DEV

← 1 2 →